HG160N10LS采用先进的SFGMOS技术，提供低 RDS（ON），低门充电，快速切换和出色的雪崩特性。该设备是专门设计的以获得更好的耐用性，并适用于在同步整流应用。N沟道场效应管，封装SOT23-3,开启电压1.7V 低结电容201pF ，应用于各类照明、太阳能源、加湿器、美容仪、雾化器等开关等领域。
VDSmin:100V、ID:5A、RDS:135mΩ、Qg:4.3nC
HG160N10LS uses advanced SFGMOS technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applications.
VDSmin:100V、ID:5A、RDS:135mΩ、Qg:4.3nC
HG160N10LS uses advanced SFGMOS technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applications.
